Analysis of the Spontaneous Emission Limited Linewidth of an Integrated III–V/SiN Laser

This article describes a calculation of the spontaneous emission limited linewidth semiconductor laser consisting hybrid or heterogeneously integrated, silicon and III–V intracavity components. Central to approach are a) description multi-element cavity in terms composite laser/free-space eigenmodes, b) use multimode theory treat mode competition multiwave mixing, c) incorporation quantum-optical contributions account for effects. Application model is illustrated case narrowing an InAs quantum-dot coupled high- Q $Q$ SiN cavity.